Product Information

DF3A6.8UFU,LF

DF3A6.8UFU,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0554 ea
Line Total: USD 166.2

8730 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
8730 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0554

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF3A6.8UFU TOSHIBA Diodes for Protecting against ESD DF3A6.8UFU ESD Protection Diode Unit: mm * This device is intended for electrostatic discharge (ESD) protection and should not be used for any other purpose, including the constant-voltage diode applications. Abusolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum JEDEC ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA 1-2P1A Semiconductor Reliability Handbook (Handling Weight: 6.0 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse stand-off voltage V 5.0 V RWM Reverse voltage V I = 1 mA 5.3 6.8 V R R Reverse current I V = 5 V 0.5 A R RWM Total capacitance C 2.5 pF T V = 0 V, f = 1 MHz R (between Cathode and Anode) Forward stand-off voltage V 25 V F I = 1 mA F Marking Equivalent Circuit (top view) Start of commercial production 2007-11 1 2016-09-21 DF3A6.8UFU Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8kV (Contact discharge) Criterion: No damage to device elements 2 2016-09-21

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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