Product Information

DF3A5.6FU(TE85L,F)

DF3A5.6FU(TE85L,F) electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5239 ea
Line Total: USD 2.62

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1
5 : USD 0.4712
10 : USD 0.3152
100 : USD 0.1293
500 : USD 0.1006
1000 : USD 0.0718
5000 : USD 0.0583

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1421
10 : USD 0.9555
100 : USD 0.2028
500 : USD 0.1337
1000 : USD 0.0914
3000 : USD 0.0702
9000 : USD 0.0602
24000 : USD 0.0568
45000 : USD 0.0501

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF3A5.6FU TOSHIBA Diodes for Protecting against ESD DF3A5.6FU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the TOSHIBA 1-2P1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.006 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 40 Z Z Reverse current I V = 2.5 V 1.0 A R R Terminal capacitance C V = 0, f = 1 MHz 65 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2002-06 2014-03-01 1DF3A5.6FU Marking Equivalent Circuit (top view) 5.6 IZ - VZ CT - VR 100 100 Ta=25C Ta=25C f=1MHz 10 1 0 0.1 0.010 10 0.0001 01 23 4 5 6 0 12 3 45 67 8 9 10 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2014-03-01 2 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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