Product Information

DF5A3.6JE,LM

DF5A3.6JE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes X34 ESD Protection Diode ESV package
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3941 ea
Line Total: USD 0.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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DF5A3.6JE,LM
Toshiba

1 : USD 0.2921
10 : USD 0.2036
100 : USD 0.1
1000 : USD 0.0587
4000 : USD 0.0517
8000 : USD 0.0403
24000 : USD 0.0391
48000 : USD 0.0368
100000 : USD 0.0345

Read More Specifications

     
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Product Category
RoHS - XON
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Package / Case
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Additional Infomation About Product

DF5A3.6JE TOSHIBA Diodes for Protecting against ESD DF5A3.6JE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1.CATHODE1 2.ANODE Power dissipation P 100 MW 3.CATHODE2 Junction temperature T 150 C 4.CATHODE3 j 5.CATHODE4 Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 12W1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.003 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 3.4 3.6 3.8 V Z Z Dynamic impedance Z I = 5 mA 130 Z Z Reverse current I V = 1 V 10 A R R Terminal capacitance C 110 pF V = 0 V, f = 1 MHz T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2002-03 1 2014-03-01 DF5A3.6JE Marking Equivalent Circuit (Top View) 3.6 IZ - VZ CT - VR 100 1000 Ta=25C Ta=25C f=1MHz 10 1 100 0 0.1 0 0.01 0 10 0.001 012 34 567 89 10 012 345 REVERSE VOLTAGE VR (V) ZENER VOLTAGE VZ (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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