Product Information

DF5A6.2CJE,LM

DF5A6.2CJE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes X34 ESD Protection Diode ESV package

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0399 ea
Line Total: USD 159.6

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0462
8000 : USD 0.0404
24000 : USD 0.0391
48000 : USD 0.0365
100000 : USD 0.0345

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0399

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.7224
10 : USD 0.5955
100 : USD 0.136
500 : USD 0.0859
1000 : USD 0.058
4000 : USD 0.0455
8000 : USD 0.0373
24000 : USD 0.0341
48000 : USD 0.0311

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5
5 : USD 0.2063
25 : USD 0.1085
100 : USD 0.095
200 : USD 0.0787
545 : USD 0.0747

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
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DF5A6.2CJE TOSHIBA Diodes for Protecting against ESD DF5A6.2CJE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. z Low terminal capacitance: C = 25 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 1.CATHODE 1 Characteristic Symbol Rating Unit 2. ANODE 3.CATHODE2 Power dissipation P 100 mW 4.CATHODE3 5.CATHODE4 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2W1A reliability significantly even if the operating conditions (i.e. Weight: 0.003 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 5.8 6.2 6.6 V Z Z Dynamic impedance Z I = 5 mA 30 Z Z Reverse current I V = 5 V 2.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 25 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-07 1 2014-03-01 DF5A6.2CJE Marking Equivalent Circuit (Top View) BW CT - VR IZ - VZ 100 100 10 1 10 0 0.1 0 0.01 1 0.001 0 012 3 45678 012 3 4567 89 10 VR REVERSE VOLTAGE VR (V) VZ ZENER VOLTAGE VZ (V) 2 2014-03-01 ZENER CURRENT IZ (mA) IZ(mA) TOTAL CAPACITANCE CT (pF) CTpF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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