Product Information

DF5A6.2LJE,LM

DF5A6.2LJE,LM electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0375 ea
Line Total: USD 150

27160 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
27160 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 4000
Multiples : 4000
4000 : USD 0.0375

13580 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.0596
10 : USD 0.0589
25 : USD 0.0522
100 : USD 0.0454
250 : USD 0.0387
1000 : USD 0.0379
3000 : USD 0.0379
6000 : USD 0.0379

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Cnhts
Hts Code
Mxhts
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DF5A6.2LJE TOSHIBA Diodes for Protecting against ESD DF5A6.2LJE Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode) : C = 6.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) 1.CATHODE1 2.ANODE Characteristics Symbol Rating Unit 3.CATHODE2 4.CATHODE3 Power dissipation P 100 mW 5.CATHODE4 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-2W1A temperature, etc.) may cause this product to decrease in the Weight: 0.003 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.9 6.2 6.5 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5V 2.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.5 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-02 1 2014-03-01 DF5A6.2LJE Marking Equivalent Circuit (Top View) BU IZ - VZ CT - VR 100 100 Ta=25C Ta=25C f=1MHz 10 1 0 0.1 0.001 10 0.0001 02 46 8 0 12 345 67 89 10 REVERSE VOLTAGE VR (V) ZENER VOLTAGE VZ (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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