Product Information

DF5A6.8LF,LF

DF5A6.8LF,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Cap Diode 4 Circuit 6pF 6.8V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0565 ea
Line Total: USD 169.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

DF5A6.8LF,LF
Toshiba

3000 : USD 0.0583

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

DF5A6.8LF,LF
Toshiba

1 : USD 0.8509
10 : USD 0.647
100 : USD 0.1574
500 : USD 0.1
1000 : USD 0.075
3000 : USD 0.0609
9000 : USD 0.0554
24000 : USD 0.0522
45000 : USD 0.049

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Series
Product Type
Packaging
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Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

DF5A6.8LF TOSHIBA Diodes for Protecting against ESD DF5A6.8LF Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode) : C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.CATHODE 1 Power dissipation P 200 mW 2. ANODE 3.CATHODE2 Junction temperature T 125 C j 4.CATHODE3 5.CATHODE4 Storage temperature range T 55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-3H1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute Weight: 0.014 g (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Knee dynamic impedance Z I = 0.5 mA 100 ZK Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 1999-04 1 2014-03-01 0.16DF5A6.8LF Marking Equivalent Circuit (top view) CU 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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