Product Information

DF3D18FU,LF

DF3D18FU,LF electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Protection Diode Bi-directional type

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1249 ea
Line Total: USD 374.7

2910 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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DF3D18FU,LF
Toshiba

3000 : USD 0.1241

     
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DF3D18FU ESD Protection Diodes Silicon Epitaxial Planar DF3D18FU 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) 3. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 3: GND USM 4. Orderable part number Orderable part number AEC-Q101 Note DF3D18FU,LF General Use DF3D18FU,LXGF YES (Note 1) Unintended Use (Note 1) DF3D18FU,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2015-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0DF3D18FU 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V (Note 1) 30 kV ESD Electrostatic discharge voltage(IEC61000-4-2)(Air) Electrostatic discharge voltage(ISO10605)(Contact) V (Note 2) 30 kV ESD Electrostatic discharge voltage(ISO10605)(Air) Peak pulse power P 80 W PK Peak pulse current I (Note 3) 2.5 A PP Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to ISO10605. ( C = 330 pF, R = 2 k ) Note 3: According to IEC61000-4-5. 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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