Product Information

NUF4401MNT1G

NUF4401MNT1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 4 Line EMI Filter w/ESD Protection

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4394 ea
Line Total: USD 0.44

1498 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

NUF4401MNT1G
ON Semiconductor

1 : USD 0.4288
10 : USD 0.4184
30 : USD 0.4103
100 : USD 0.404

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Frequency Range
Inductance
Operating Temperature Range
Product
Resistance
Type
Brand
Circuit Type
Number Of Elements
Case Height
Case Length
Case Width
Cutoff Frequency
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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NUF4401MN EMI Filter, 4-Channel, with Integrated ESD Protection The NUF4401MN is a fourchannel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 15 pF deliver a cutoff frequency of 125 MHz and NUF4401MN 1 2 3 4 GND 8 7 6 5 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 8 Filter + ESD Channel 1 Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 15 kV PP SteadyState Power per Resistor P 100 mW R SteadyState Power per Package P 400 mW T Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 20 mA 170 200 230 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 12 15 18 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 24 30 36 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 125 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 200 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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