Product Information

NUF4220MNT1G

NUF4220MNT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor ESD Suppressors 4 CH LC EMI FILTER IN DFN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8051 ea
Line Total: USD 0.81

8730 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5542 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

NUF4220MNT1G
ON Semiconductor

1 : USD 0.7264
10 : USD 0.6829
25 : USD 0.6061
100 : USD 0.5656
250 : USD 0.5015
500 : USD 0.4915
1000 : USD 0.4915
3000 : USD 0.4915

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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NUF4220MN Audio EMI Filter, 4 Line, with ESD Protection NUF4220MN is a 4 line LC EMI filter array designed for audio applications. It offers greater than 30 dB attenuation at frequencies from 800 MHz to 5.0 GHz, with no line loss. This part is a single chip NUF4220MN MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 18 kV PP SteadyState Power per Inductor P 90 mW L SteadyState Power per Package P 360 mW T Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C stg Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage I = 1.0 mA V 6.0 7.0 8.0 V R BR Leakage Current V = 3.3 V I 0.1 A RWM R Inductance 4.9 nH L Series Resistance R 0.6 0.85 1.1 S Capacitance (Note 1, 3) C 205 pF d CutOff Frequency (Note 2) Above this frequency, f 16 MHz 3dB appreciable attenuation occurs 1. Measured at 25C, V = 0 V, f = 1.0 MHz. R 2. 50 source and 50 load termination. 3. Total line capacitance is 2 times the diode capacitance (C ). d

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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