Product Information

NUF4211MNT1G

NUF4211MNT1G electronic component of ON Semiconductor

Datasheet
EMI Network Filter Arrays 4CH EMI FILTR IN DFN 2X2mm

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5209 ea
Line Total: USD 0.52

2827 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
989 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 23
Multiples : 1

Stock Image

NUF4211MNT1G
ON Semiconductor

23 : USD 0.3655
25 : USD 0.3415
100 : USD 0.3284
250 : USD 0.3217

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Frequency Range
Inductance
Operating Temperature Range
Product
Resistance
Type
Brand
Circuit Type
Number Of Elements
Case Height
Case Length
Case Width
Cutoff Frequency
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Category
Brand Category
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NUF4211MN 4-Channel EMI Filter with Integrated ESD Protection The NUF4211MN is a four channel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 8.5 pF deliver a cutoff frequency of 250 MHz and NUF4211MN 1 2 3 4 GND 8 7 6 5 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 8 Filter + ESD Channel 1 Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP Machine Model 0.4 Human Body Model 8.0 Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 10 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 8.5 11 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 17 22 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 250 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 395 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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