Product Information

STB120N4LF6

STB120N4LF6 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.4596 ea
Line Total: USD 1459.6

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STB120N4LF6
STMicroelectronics

1000 : USD 1.4596
2000 : USD 1.3945
5000 : USD 1.3444

0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STB120N4LF6
STMicroelectronics

1 : USD 7.8707
10 : USD 2.8376
25 : USD 2.6822
100 : USD 2.2783

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 25
Multiples : 1

Stock Image

STB120N4LF6
STMicroelectronics

25 : USD 1.7036

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 m, 80 A DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D STB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A 3 3 1 1 Logic level drive DPAK DPAK 100% avalanche tested Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is a 40 V N-channel STripFET VI Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 DPAK 120N4LF6 Tape and reel STD120N4LF6 DPAK February 2011 Doc ID 16919 Rev 2 1/18 www.st.com 18 Contents STB120N4LF6, STD120N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/18 Doc ID 16919 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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