Product Information

STB37N60DM2AG

STB37N60DM2AG electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 4.445 ea
Line Total: USD 4445

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

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STB37N60DM2AG
STMicroelectronics

1000 : USD 4.6228
2000 : USD 4.3602

0 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STB37N60DM2AG
STMicroelectronics

1 : USD 9.4091
10 : USD 9.1827
30 : USD 9.0317
100 : USD 8.8809

0 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STB37N60DM2AG
STMicroelectronics

1 : USD 9.9251
10 : USD 6.5244

0 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2
Multiples : 1

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STB37N60DM2AG
STMicroelectronics

2 : USD 4.8691

0 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STB37N60DM2AG
STMicroelectronics

1000 : USD 4.2777

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Height
Length
Product
Type
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capacitance 2 D PAK Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Figure 1: Internal schematic diagram Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB37N60DM2AG 37N60DM2 DPAK Tape and reel August 2015 DocID028271 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB37N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID028271 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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