Product Information

STB45N60DM2AG

STB45N60DM2AG electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 4.2196 ea
Line Total: USD 4219.6

970 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STB45N60DM2AG
STMicroelectronics

1000 : USD 4.2196
2000 : USD 4.2196

741 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2
Multiples : 1

Stock Image

STB45N60DM2AG
STMicroelectronics

2 : USD 6.3117
10 : USD 5.8717
25 : USD 5.522
50 : USD 5.1843
100 : USD 4.3893
250 : USD 4.3016

970 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STB45N60DM2AG
STMicroelectronics

1000 : USD 4.2196

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Height
Length
Product
Type
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STB45N60DM2AG Datasheet Automotive-grade N-channel 600 V, 85 m typ., 34 A MDmesh DM2 Power MOSFET in a DPAK package Features TAB V T max. R max. I P Order code DS J DS(on) D TOT STB45N60DM2AG 650 V 93 m 34 A 250 W 2 3 1 AEC-Q101 qualified D P AK Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness G(1) Zener-protected Applications S(3) AM01476v1 tab Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STB45N60DM2AG Product summary Order code STB45N60DM2AG Marking 45N60DM2 Package DPAK Packing Tape and reel DS11105 - Rev 2 - August 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB45N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 34 C I A D Drain current (continuous) at T = 100 C 21 C (1) I Drain current (pulsed) 136 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. 2. I 34 A, di/dt = 800 A/s, V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.50 C/W thJC (1) R Thermal resistance, junction-to-board 30 C/W thJB 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive 6 A AR (1) E Single pulse avalanche energy 800 mJ AS 1. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS11105 - Rev 2 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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