Product Information

STB45N50DM2AG

STB45N50DM2AG electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.9072 ea
Line Total: USD 5.91

769 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
769 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STB45N50DM2AG
STMicroelectronics

1 : USD 5.9072
10 : USD 5.8565
25 : USD 4.4382
100 : USD 4.3494
250 : USD 4.3494
500 : USD 4.3494

769 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2
Multiples : 1

Stock Image

STB45N50DM2AG
STMicroelectronics

2 : USD 5.9072
10 : USD 5.8565
25 : USD 4.4382
100 : USD 4.3494

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Height
Length
Product
Type
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STB45N50DM2AG Automotive-grade N-channel 500 V, 0.07 typ., 35 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I P DS D TOT TAB max. STB45N50DM2AG 500 V 0.084 35 A 250 W 3 Designed for automotive applications and 1 AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input 2 D PAK capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB45N50DM2AG 45N50DM2 DPAK Tape and reel October 2015 DocID028417 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB45N50DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID028417 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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