Product Information

STB170NF04

STB170NF04 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-CH 40V STripFET 80A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 2.0488 ea
Line Total: USD 2048.8

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

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STB170NF04
STMicroelectronics

1000 : USD 2.7833
2000 : USD 2.756
3000 : USD 2.7287
4000 : USD 2.7014
5000 : USD 2.6741
6000 : USD 2.6468
10000 : USD 2.6208
20000 : USD 2.5948
50000 : USD 2.5688

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STB170NF04
STMicroelectronics

1 : USD 5.5678
10 : USD 3.6557

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

STB170NF04 N-channel 40 V, 4.4 m typ., 80 A STripFET II Power MOSFET 2 in a D PAK package Datasheet production data Features V T R DSS J DS(on) Order code I P D TOT max. max. STB170NF04 40 V < 5 m 80 A 300 W TAB Standard threshold drive 3 1 Applications 2 D PAK Automotive switching applications Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique single feature size strip-based process, which decreases the critical alignment steps to offer exceptional Figure 1. Internal schematic diagram manufacturing reproducibility. The result is a transistor with extremely high packing density for , TAB low on-resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging 2 STB170NF04 B170NF04 D PAK Tape and reel October 2012 Doc ID 15591 Rev 2 1/15 This is information on a product in full production. www.st.com 15Contents STB170NF04 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 Doc ID 15591 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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