Product Information

STB12NK80ZT4

STB12NK80ZT4 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 2.9538 ea
Line Total: USD 8.86

168 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
168 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3
Multiples : 1

Stock Image

STB12NK80ZT4
STMicroelectronics

3 : USD 3.0719
10 : USD 3.0104

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z N-channel 800 V, 0.65 typ., 10.5 A Zener-protected SuperMESH 2 Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB V DSS Type R I P DS(on) D W ( Tjmax) 3 1 3 STB12NK80Z 800V <0.75 10.5 A 190W 2 2 D PAK 1 STF12NK80Z 800V <0.75 10.5 A 40W TO-220FP TAB STP12NK80Z 800V <0.75 10.5 A 190W STW12NK80Z 800V <0.75 10.5 A 190W Extremely high dv/dt capability 3 2 Improved esd capability 1 TO-220 TO-247 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Figure 1. Internal schematic diagram Very good manufacturing reliability D(2,TAB) Applications Switching applications Description G(1) These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In S(3) addition to a significant reduction in on- AM01476v1 resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging 2 STB12NK80Z 12NK80Z D PAK Tape and reel STF12NK80Z 12NK80Z TO-220FP Tube STP12NK80Z 12NK80Z TO-220 Tube STW12NK80Z 12NK80Z TO-247 Tube August 2012 Doc ID 9567 Rev 7 1/22 This is information on a product in full production. www.st.com 22Contents STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 9567 Rev 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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