Product Information

NUF2450MUT2G

NUF2450MUT2G electronic component of ON Semiconductor

Datasheet
EMI Filter Beads, Chips & Arrays 2 Line EMI Filter w/ESD Protection

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 3000
Multiples : 3000

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NUF2450MUT2G
ON Semiconductor

3000 : USD 0.2063
6000 : USD 0.1884
9000 : USD 0.1805
24000 : USD 0.1761
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 3000

Stock Image

NUF2450MUT2G
ON Semiconductor

3000 : USD 0.1814
N/A

Obsolete
0 - Global Stock

MOQ : 1890
Multiples : 1890

Stock Image

NUF2450MUT2G
ON Semiconductor

1890 : USD 0.2225
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

NUF2450MUT2G
ON Semiconductor

1 : USD 0.343
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

NUF2450MUT2G
ON Semiconductor

1 : USD 1.2409
10 : USD 0.5799
100 : USD 0.3143
500 : USD 0.2527
1000 : USD 0.2049
3000 : USD 0.188
6000 : USD 0.178
9000 : USD 0.1681
24000 : USD 0.1631
N/A

Obsolete
0 - Global Stock

MOQ : 37
Multiples : 1

Stock Image

NUF2450MUT2G
ON Semiconductor

37 : USD 0.3084
100 : USD 0.2454
250 : USD 0.2405
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Dimensions
Impedance
Product
Brand
Case Height
Case Length
Case Width
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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NUF2450 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for audio applications. Greater than 30 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF2450MU has a cutoff frequency of www.onsemi.com 20 MHz and minimal line resistance, making it ideal for applications requiring low bandpass attenuation. This UDFN package is specifically designed to enhance EMI filtering for lowprofile or slim L design electronics especially where space and height is a premium. It 1 8 also offers ESD protectionclamping transients from static discharges. Cd Cd ESD protection is provided across all capacitors. L Features 4 5 EMI Filtering and ESD Protection Cd Cd Integration of 10 Discrete Components Compliance with IEC6100042 (Level 4) (Top View) 20 kV (Contact) UDFN Package, 1.2 x 1.8 mm 8 Moisture Sensitivity Level 1 MARKING ESD Ratings: Machine Model = C DIAGRAM 1 Human Body Model = 3B UDFN8 24 M These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 517AD 1 Compliant Benefits 24 = Specific Device Code M = Month Code Reduces EMI/RFI Emissions on Audio Lines = PbFree Package Low Profile Package Typical Height of 0.5 mm (Note: Microdot may be in either location) DesignFriendly and EasytoUse Pin Configurations, Particularly for Portable Electronics PIN CONNECTIONS Integrated Solution Offers Cost and Space Savings in UDFN Package 14 Reduces Parasitic Inductances Which Offer a More Ideal Low Pass Filter Response Integrated Solution Improves System Reliability GND Excellent ESD Performance with Large GND Pad Applications 8 5 Headsets, MP3 Players, and PDAs (Bottom View) Portable DVDs HandsFree Interface ORDERING INFORMATION Device Package Shipping NUF2450MUT2G UDFN8 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2017 Rev. 1 NUF2450/DNUF2450 MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 V kV PP Contact Discharge 20 Machine Model 1.6 Human Body Model 16 Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Inductance L 2.3 nH Series Resistance R 0.9 1.3 1.7 S Capacitance (Note 1) C V = 0 V, f = 1.0 MHz 190 240 290 pF line R CutOff Frequency (Note 2) f Above this frequency, 20 MHz 3dB Appreciable Attenuation Occurs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Measured at 25C. 2. 50 source and 50 load termination. TYPICAL CHARACTERISTICS 0 0 5 10 10 20 15 20 30 25 40 30 35 50 40 60 45 50 70 1.00E+06 1.00E+07 1.00E+08 1.00E+09 1.00E+10 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Typical Insertion Loss Figure 2. Analog Crosstalk Curve (S41 Characteristics (S21 Measurement) Measurement) www.onsemi.com 2 S21 (dB) S41 (dB)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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