Product Information

NUF2114MNT1G

NUF2114MNT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor EMI Filter Beads, Chips & Arrays PWR MICRO 2 LINE AUDO FTR
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7969 ea
Line Total: USD 0.8

6883 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6883 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

NUF2114MNT1G
ON Semiconductor

1 : USD 0.7969
10 : USD 0.5761
250 : USD 0.5577
500 : USD 0.5083
1000 : USD 0.4761
3000 : USD 0.4071

37 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 17
Multiples : 1

Stock Image

NUF2114MNT1G
ON Semiconductor

17 : USD 0.4457

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

NUF2114 2 Line Audio EMI Filter with ESD Protection This device is a 2 line audio EMI filter array designed for speaker applications. It offers greater than 30 dB attenuation at frequencies from 900 MHz to 3.0 GHz. This device also offers ESD NUF2114 MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 30 kV PP SteadyState Power per Resistor 25C P 180 mW R SteadyState Power per Package 25C P 360 mW T Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C stg Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit Maximum Reverse Working Voltage V 12 V RWM Breakdown Voltage I = 1.0 mA V 13.7 15.7 17.7 V R BR Leakage Current V = 12 V I 0.1 A RWM R Resistance I = 40 mA R 8.1 9.0 9.9 F Capacitance per Diode (Notes 1, 3) C 51 60 66 pF d Cut Off Frequency (Note 2) Above this frequency, f 50 MHz 3dB appreciable attenuation occurs 1. Measured at 25C, V = 0 V, f = 1.0 MHz. R 2. 50 source and 50 load termination. 3. Total line capacitance is 2 times the diode capacitance (C ). d

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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