Product Information

BLF878,112

BLF878,112 electronic component of NXP

Datasheet
RF MOSFET Transistors LDMOS TNS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 269.8338 ea
Line Total: USD 269.83

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 269.8338
5 : USD 254.4041

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF878 UHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at V = 42 V in a common-source 860 MHz narrowband test circuit. DS Mode of operation f P P P G IMD3 L L(PEP) L(AV) p D (MHz) (W) (W) (W) (dB) (%) (dBc) CW, class AB 860 300 - - 21 60 - 2-Tone, class AB f = 860 f = 860.1 - 300 - 21 46 35 1 2 1 PAL BG 860 (ch69) 300 (peak sync.) - - 21 45 - 2 DVB-T (8k OFDM) 858 - - 75 21 32 32 1 Black video signal, sync expansion: input sync = 33 % output sync 27 %. 2 Measured dBc with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features 2-Tone performance at 860 MHz, a drain-source voltage V of 42 V and a quiescent DS drain current I = 1.4 A: Dq Peak envelope power load power = 300 W Power gain = 21 dB Drain efficiency = 46 % Third order intermodulation distortion = 35 dBc DVB performance at 858 MHz, a drain-source voltage V of 42 V and a quiescent DS drain current I = 1.4 A: Dq Average output power = 75 W Power gain = 21 dB Drain efficiency = 32 % Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)BLF878 UHF power LDMOS transistor Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input and output matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 1 2 1 2 drain2 5 3 gate1 3 4 gate2 5 3 4 4 1 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF878 - flanged LDMOST ceramic package 2 mounting holes 4 leads SOT979A BLF878 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 19

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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