Product Information

BLF881,112

BLF881,112 electronic component of NXP

Datasheet
RF MOSFET Transistors UHF power LDMOS transistor
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 108.5478 ea
Line Total: USD 108.55

0 - Global Stock
MOQ: 1  Multiples: 60
Pack Size: 60

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 60
1 : USD 108.5478
10 : USD 101.9521

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLF881 BLF881S UHF power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at V = 50 V in a common-source 860 MHz test circuit. DS Mode of operation f P P P G IMD3 IMD L L(PEP) L(AV) p D shldr (MHz) (W) (W) (W) (dB) (%) (dBc) (dBc) 2-tone, class AB f = 860 f = 860.1 - 140 - 21 49 34 - 1 2 1 DVB-T (8k OFDM) 858 - - 33 21 34 - 33 1 Measured dBc with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =0.5 A: Dq Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = 34 dBc DVB performance at 858 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =0.5 A: Dq Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = 33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gainBLF881 BLF881S UHF power LDMOS transistor High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF881 (SOT467C) 1drain 1 2gate 1 3source 2 3 sym112 BLF881S (SOT467B) 1drain 1 1 2gate 1 3source 3 2 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF881 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT467C BLF881S - earless LDMOST ceramic package 2 leads SOT467B BLF881 BLF881S 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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