Product Information

BLF988S,112

BLF988S,112 electronic component of NXP

Datasheet
RF MOSFET Transistors BLF988SLDMOSTTUBE-BULK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 759.4331 ea
Line Total: USD 759.43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 759.4331

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF988 BLF988S Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f P P G IMD3 L(AV) L(M) p D (MHz) (W) (W) (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB f = 860 f = 860.1 250 - 20.8 46 32 1 2 pulsed, class-AB 860 - 600 19.8 58 - 1.2 Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, R = 0.15 K/W th(j-c) High power gain High efficiency Designed for broadband operation (400 MHz to 1000 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications Industrial applicationsBLF988 BLF988S Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF988 (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLF988S (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF988 - flanged balanced ceramic package 2 mounting holes 4 leads SOT539A BLF988S - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. BLF988 BLF988S 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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