Product Information

BLP7G22-10Z

BLP7G22-10Z electronic component of NXP

Datasheet
NXP Semiconductors RF MOSFET Transistors plastic LDMOS power transistor

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.8115 ea
Line Total: USD 14.81

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 14.8115
10 : USD 13.6299
25 : USD 13.0582
50 : USD 12.3493
100 : USD 11.5031
250 : USD 10.9649
500 : USD 10.9649
1000 : USD 10.843
2500 : USD 10.1111

     
Manufacturer
Product Category
Technology
Id - Continuous Drain Current
Operating Frequency
Gain
Maximum Operating Temperature
Mounting Style
Packaging
Package Case
Type
Brand
Forward Transconductance Min
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
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BLP7G22-10 LDMOS driver transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at T =25 C; I = 110 mA; in a class-AB application circuit. case Dq Test signal f I V P G ACPR Dq DS L(AV) p D 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Pulsed CW 2700 110 28 2 14.5 26 - [1] 1-carrier W-CDMA 748 110 28 0.7 27.5 13.5 43 748 110 28 2 27.5 25 40 2-carrier W-CDMA 2140 110 28 0.7 17.4 13 51 2140 110 28 2 17.4 25 40 [1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF; RF performance at V = 28 V; I = 110 mA. DS Dq 1.2 Features and benefits High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications CDMA W-CDMA GSM EDGE MC-GSM LTE WiMAXBLP7G22-10 LDMOS driver transistor 2. Pinning information Table 2. Pinning [1] Pin Description Simplified outline Graphic symbol 1, 6, 7, 12 n.c. 12 7 10, 11 2, 3, 4, 5 gate 8, 9, 10, 11 drain 2, 3 exposed exposed die-pad source die-pad 4, 5 1 6 Transparent top view 8, 9 aaa-007804 [1] To be used in single ended applications only. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLP7G22-10 HVSON12 plastic thermal enhanced very thin small outline SOT1179-2 package; no leads; 12 terminals; body 6 4 0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 150 C j BLP7G22-10#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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