Product Information

BLF888,112

BLF888,112 electronic component of NXP

Datasheet
RF MOSFET Transistors TRANSISTOR RF PWR LDMOS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 306.5158 ea
Line Total: USD 306.52

0 - Global Stock
MOQ: 1  Multiples: 60
Pack Size: 60

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 60
1 : USD 306.5158

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLF888 UHF power LDMOS transistor Rev. 6 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application information RF performance at V = 50 V in a common source 860 MHz narrowband test circuit unless DS otherwise specified. Mode of operation f P P G IMD3 IMD L(PEP) L(AV) p D shldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) 2-Tone, class AB f = 860 f = 860.1 500 250 19 46 32 - 1 2 1 DVB-T (8k OFDM) 858 - 110 19 31 - 31 1 Measured dBc with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =1.3 A: Dq Peak envelope power load power = 500 W Power gain = 19 dB Drain efficiency = 46 % Third order intermodulation distortion = 32 dBc DVB performance at 858 MHz, a drain-source voltage V of 50 V and a quiescent DS drain current I =1.3 A: Dq Average output power = 110 W Power gain = 19 dB Drain efficiency = 31 % Shoulder distance = 31 dBc (4.3 MHz from center frequency) Integrated ESD protection Advanced flange material for optimum thermal behavior and reliabilityBLF888 UHF power LDMOS transistor Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 1 2 1 2drain2 5 3 gate1 3 4 gate2 5 3 4 4 1 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF888 - flanged LDMOST ceramic package 2 mounting holes 4 leads SOT979A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 104 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF888 6 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 6 1 September 2015 2 of 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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