Product Information

BF1105WR,115

BF1105WR,115 electronic component of NXP

Datasheet
RF MOSFET Transistors TAPE-7 MOS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2036 ea
Line Total: USD 0.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.2036
5 : USD 0.2024
50 : USD 0.1989
250 : USD 0.1884
1000 : USD 0.1814
2500 : USD 0.179

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1105 BF1105R BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01NXP Semiconductors Product specification BF1105 BF1105R N-channel dual-gate MOS-FETs BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz. 2 1 4 gate 1 Internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1105R marking code: NAp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 alfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 21 substrate interconnected. Integrated diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1105, BF1105 marking code: NEp. BF1105WR marking code: NA. BF1105R and BF1105WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 7V DS I drain current 30 mA D P total power dissipation T 80 C 200 mW tot amb y forward transfer admittance 25 31 mS fs C input capacitance at gate 1 2.2 2.7 pF ig1-ss C reverse transfer capacitance f = 1 MHz 25 40 fF rss F noise figure f = 800 MHz 1.7 2.5 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 dB V mod T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1997 Dec 02 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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