Product Information

BF1204,115

BF1204,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

42: USD 0.8598 ea
Line Total: USD 36.11

0 - Global Stock
MOQ: 42  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Application
Output Capacitance Typ Vds
Power Gain Typ Vds
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2010 Sep 16 Supersedes data of 2001 Apr 25NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1gate1(a) Superior cross-modulation performance during AGC 2gate2 High forward transfer admittance 3gate1(b) High forward transfer admittance to input capacitance 4 drain (b) ratio. 5 source 6 drain (a) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital handbook, halfpage d (a) s d (b) and analog television tuners and professional 6 5 4 communications equipment. AMP AMP DESCRIPTION a b The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. 132 g1 (a) g2 g1 (b) The source and substrate are interconnected. Internal bias Top view MBL252 circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated Marking code: L3* * = - : made in Hong Kong * = p : made in Hong Kong diodes between the gates and source protect against * = t : made in Malaysia excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified V drain-source voltage 10 V DS I drain current (DC) 30 mA D P total power dissipation T 102 C note 1 200 mW tot s y forward transfer admittance I =12mA f=1MHz 25 30 40 mS fs D C input capacitance at gate 1 I =12mA f=1MHz 1.7 2.2 pF ig1-s D C reverse transfer capacitance f = 1 MHz 15 fF rss NF noise figure f = 800 MHz 1.1 1.8 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 105 dB V mod T operating junction temperature 150 C j Note 1. T is the temperature at the soldering point of the source lead. s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 16 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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