Product Information

BF1208,115

BF1208,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 6V 0.03A 6-Pin SOT-666 T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

42: USD 0.8333 ea
Line Total: USD 35

0 - Global Stock
MOQ: 42  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Rad Hardened
Application
Output Capacitance Typ Vds
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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Additional Infomation About Product

BF1208 Dual N-channel dual gate MOSFET Rev. 2 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment SOT666BF1208 NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage (DC) - - 6 V DS I drain current (DC) - - 30 mA D [1] P total power dissipation T 109 C - - 180 mW tot sp y forward transfer admittance f = 1 MHz fs amplifier A; I =19mA 26 31 41 mS D amplifier B; I =13mA 28 33 43 mS D C input capacitance at gate1 f = 1 MHz iss(G1) amplifier A - 2.2 2.7 pF amplifier B - 2.0 2.5 pF C reverse transfer capacitance f = 1 MHz - 20 - fF rss NF noise figure amplifier A; f = 400 MHz - 1.3 1.9 dB amplifier B; f = 800 MHz - 1.4 2.1 dB Xmod cross-modulation input level for k = 1 % at 40 dB AGC amplifier A 100 105 - dB V amplifier B 100 103 - dB V T junction temperature - - 150 C j [1] T is the temperature at the soldering point of the source lead. sp 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 6 5 4 2gate2 AMP A 3 gate1 (AMP B) G1A DA 4 drain (AMP B) 5source G2 S 12 3 6 drain (AMP A) G1B DB AMP B sym089 BF1208 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 7 September 2011 2 of 23

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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