Product Information

BLF188XRSU

BLF188XRSU electronic component of NXP

Datasheet
NXP Semiconductors RF MOSFET Transistors Power LDMOS Transistor
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 228.3119
2 : USD 228.3119
5 : USD 228.3119
10 : USD 228.3119
25 : USD 228.3119
50 : USD 221.7744
100 : USD 210.7607
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Package Case
Type
Brand
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLF188XR BLF188XRS Power LDMOS transistor Rev. 6 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 2 to 30 50 1270 29.0 75 27 50 1400 23.7 73 41 50 1200 22.0 82 60 48 1240 22.0 77 72.5 50 1350 23.1 83 81.4 50 1200 27.1 77.8 88 to 108 50 1320 22.5 85 108 50 1200 26.5 83 200 50 1288 19.3 68.3 pulsed RF 81.4 50 1200 25.8 85 81.4 50 1400 25.4 81 108 50 1400 24.0 73 DVB-T 174 to 230 50 225 23.8 29 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF188XR BLF188XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF188XR (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLF188XRS (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF188XR - flanged balanced ceramic package 2 mounting holes 4 leads SOT539A BLF188XRS - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator BLF188XR BLF188XRS 6 All information provided in this document is subject to legal disclaimers. Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 6 1 September 2015 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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