Product Information

BF1215,115

BF1215,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

62: USD 0.4342 ea
Line Total: USD 26.92

0 - Global Stock
MOQ: 62  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BF1215 Dual N-channel dual gate MOSFET Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is availiable as a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package one with full internal bias and one with partial internal bias Superior cross modulation performance during AGC High forward transfer admittance to input capacitance ratio Suitable for VHF and UHF applications: both amplifiers are optimized for VHF applications. Internal switch reduces external components 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply Digital and analog television tuners Professional communication equipmentBF1215 NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data for amplifier A and B Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage DC - - 6 V DS I drain current DC - - 30 mA D 1 P total power dissipation T 107 C -- 180 mW tot sp y forward transfer admittance f = 100 MHz T =25 C 23 27 38 mS fs j I =19mA D 2 C input capacitance at gate1 f = 100 MHz -2.5 - pF iss(G1) 2 C reverse transfer capacitance f = 100 MHz -27 - fF rss NF noise figure f = 400 MHz Y =Y -1.5 - dB S S(opt) f=800MHz Y =Y -1.9 - dB S S(opt) 3 Xmod cross modulation input level for k = 1 % at 105 107 - dBV 40 dB AGC f =50MHz w f =60MHz unw T junction temperature - - 150 C j 1 T is the temperature at the soldering point of the source lead. sp 2 Calculated from S-parameters. 3 Measured in Figure 32 and Figure 33 test circuits. 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 gate1 (amplifier A) 6 5 4 2gate2 AMP a G1 D 3 gate1 (amplifier B) (A) (A) 4 drain (amplifier B) 132 5source G2 S 6 drain (amplifier A) G1 D (B) (B) AMP b sym033 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1215 - plastic surface-mounted package 6 leads SOT363 BF1215 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 6 May 2010 2 of 22

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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