Product Information

BF512,215

BF512,215 electronic component of NXP

Datasheet
Transistors RF JFET TAPE7 FET-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.2509
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5184
100 : USD 0.334
1000 : USD 0.2675
3000 : USD 0.263
9000 : USD 0.263
24000 : USD 0.2529
45000 : USD 0.2495
99000 : USD 0.2439
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up BF513 = S9p to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios 3 handbook, halfpage (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 12 1= gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage V max. 20 V DS Drain current (DC or average) I max. 30 mA D Total power dissipation up to T =40 CP max. 250 mW amb tot BF510 511 512 513 Drain current 0.7 2.5 6 10 mA V =10 V V = 0 I 3.0 7.0 12 18 mA DS GS DSS Transfer admittance (common source) V =10 V V =0 f = 1 kHz y 2.5 467mS DS GS fs Feedback capacitance V = 10 V V =0 C typ. 0.3 0.3 pF DS GS rs V = 10 V I =5 mA C typ. 0.3 0.3 pF DS D rs Noise figure at optimum source admittance G =1 mS B = 3 mS f = 100 MHz S S V =10 V V =0 F typ. 1.5 1.5 dB DS GS =10 V I =5 mA F typ. 1.5 1.5 dB V DS D December 1997 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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