Product Information

BF550

BF550 electronic component of Nexperia

Datasheet
TRANS, PNP, -40V, 325MHZ, SOT-23-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4108 ea
Line Total: USD 2.05

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1

Stock Image

BF550
Nexperia

5 : USD 0.3599
50 : USD 0.2554
100 : USD 0.1634
500 : USD 0.1213
1500 : USD 0.1195

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF550 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Medium frequency applications in thick and thin film circuits. DESCRIPTION handbook, halfpage 3 PNP medium frequency transistor in a SOT23 plastic 3 package. 1 MARKING 2 (1) 1 2 TYPE NUMBER MARKING CODE BF550 LA* Top view MAM256 Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF550 plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 40 V CEO V emitter-base voltage open collector 4 V EBO I collector current (DC) 25 mA C I peak collector current 25 mA CM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 16 2

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