Product Information

BLF884P,112

BLF884P,112 electronic component of NXP

Datasheet
RF MOSFET Transistors 50V 240mOhms
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 148.4683 ea
Line Total: USD 148.47

0 - Global Stock
MOQ: 1  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 20
1 : USD 148.4683
5 : USD 139.987

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLF884P BLF884PS UHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at V = 50 V unless otherwise specified. DS Mode of operation f P P G IMD3 IMD PAR L(AV) L(M) p D shldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB f = 860 f = 860.1 150 - 21 46 32 - - 1 2 1 2 DVB-T (8k OFDM) 858 70 - 21 33 - 31 8.2 RF performance in a common source 470 MHz to 860 MHz broadband test circuit 1 2 DVB-T (8k OFDM) 858 70 - 20 32 - 32 8.0 1 Measured dBc with delta marker at 4.3 MHz from center frequency. 2 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness Optimum thermal behavior and reliability, R = 0.22 K/W th(j-c) High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF bandBLF884P BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF884P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 BLF884PS (SOT1121B) 1drain1 1 2drain2 3gate1 3 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF884P - flanged LDMOST ceramic package SOT1121A 2 mounting holes 4 leads BLF884PS - earless flanged LDMOST ceramic package SOT1121B 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 104 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF884P BLF884PS 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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