Product Information

PMCXB900UEZ

PMCXB900UEZ electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20 V, complementary NP-channel Trench
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

10407 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1982 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

PMCXB900UEZ
Nexperia

1 : USD 0.263
10 : USD 0.2284
30 : USD 0.2136
100 : USD 0.195
500 : USD 0.187
1000 : USD 0.121

10407 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

PMCXB900UEZ
Nexperia

1 : USD 0.3692
10 : USD 0.2863
100 : USD 0.1598
1000 : USD 0.107
5000 : USD 0.1046
10000 : USD 0.0978
25000 : USD 0.0978
50000 : USD 0.0932

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: V = 0.7 V GS(th) Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS j I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS ambNexperia PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D2 1 S1 source TR1 D1 1 6 2 G1 gate TR1 7 3 D2 drain TR2 G1 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 5. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCXB900UE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 6. Marking Table 4. Marking codes Type number Marking code PMCXB900UE 10 00 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMCXB900UE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 20

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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