PMDPB30XN

PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5.3 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 32 40 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMDPB30XN 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 7 8 3 D2 drain TR2 4 S2 source TR2 1 2 3 G1 S1 S2 G2 5 G2 gate TR2 017aaa254 Transparent top view 6 D1 drain TR1 DFN2020-6 (SOT1118) 7 D1 drain TR1 8 D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB30XN DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB30XN 1V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 20 V DS j V gate-source voltage -12 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - 5.3 A D GS amb V = 4.5 V T = 25 C 1 - 4 A GS amb V = 4.5 V T = 100 C 1 - 2.6 A GS amb I peak drain current T = 25 C single pulse t 10 s - 12 A DM amb p PMDPB30XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 2 / 13