Product Information

PMDPB55XP,115

PMDPB55XP,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20V, Dual P-Channel Trench MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

1909 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4224 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMDPB55XP,115
Nexperia

1 : USD 0.3125
10 : USD 0.2934
25 : USD 0.2921
100 : USD 0.2483
250 : USD 0.2467
500 : USD 0.2172
1000 : USD 0.2005
3000 : USD 0.1812

145500 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

PMDPB55XP,115
Nexperia

3000 : USD 0.1768
6000 : USD 0.1768
9000 : USD 0.1768
15000 : USD 0.1768
30000 : USD 0.1768

1909 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMDPB55XP,115
Nexperia

1 : USD 0.4174
10 : USD 0.36
100 : USD 0.2645
500 : USD 0.2185
1000 : USD 0.1863
3000 : USD 0.1633
9000 : USD 0.1633
24000 : USD 0.1598

81480 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

PMDPB55XP,115
Nexperia

3000 : USD 0.25
21000 : USD 0.245

4224 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 43
Multiples : 1

Stock Image

PMDPB55XP,115
Nexperia

43 : USD 0.2241
100 : USD 0.2068
250 : USD 0.187
500 : USD 0.1832

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC/DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMDPB55XP Nexperia 20 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa258 Transparent top view 7D1 drain TR1 SOT1118 (DFN2020-6) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB55XP DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB55XP 1Z PMDPB55XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 4 June 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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