Product Information

PMDPB70XPE,115

PMDPB70XPE,115 electronic component of Nexperia

Datasheet
MOSFET PMDPB70XPE/HUSON6/REEL7

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7524 ea
Line Total: USD 0.75

10018 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15629 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMDPB70XPE,115
Nexperia

1 : USD 0.5208
10 : USD 0.407
100 : USD 0.2267
1000 : USD 0.1637
3000 : USD 0.1388
9000 : USD 0.1388
45000 : USD 0.1329

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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PMDPB70XPE 20 V dual P-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching 2 kV ElectroStatic Discharge (ESD) protection Trench MOSFET technology 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.2 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-2 A T = 25 C - 66 79 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMDPB70XPE Nexperia 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 G1 G2 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 Transparent top view S1 S2 7D1 drain TR1 017aaa260 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB70XPE DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB70XPE 2B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS j V gate-source voltage -12 12 V GS 1 I drain current V =-4.5 V T =25C t 5 s --4.2 A D GS amb 1 V =-4.5 V T =25C --3 A GS amb 1 V =-4.5 V T =100 C --2.1 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12 A DM amb p 2 P total power dissipation T =25C - 515 mW tot amb 1 - 1210 mW T = 25 C - 8330 mW sp Source-drain diode 1 I source current T =25C --1.3 A S amb PMDPB70XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 20 June 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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