Product Information

PMDXB950UPEZ

PMDXB950UPEZ electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3607 ea
Line Total: USD 0.36

6235 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4716 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

PMDXB950UPEZ
Nexperia

1 : USD 0.2614
10 : USD 0.2112
30 : USD 0.1773
100 : USD 0.1635
500 : USD 0.1573
1000 : USD 0.1537

6235 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMDXB950UPEZ
Nexperia

1 : USD 0.3607
10 : USD 0.2776
100 : USD 0.1554
1000 : USD 0.1056
5000 : USD 0.102
10000 : USD 0.0949
25000 : USD 0.0949
50000 : USD 0.0902

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMDXB950UPE 20 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa260 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB950UPE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB950UPE 10 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB950UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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