Product Information

PMF63UNEX

PMF63UNEX electronic component of Nexperia

Datasheet
MOSFET PMF63UNE/SC-70/REEL 7" Q1/T1 *
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3014 ea
Line Total: USD 0.3

48882 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
14550 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

PMF63UNEX
Nexperia

3000 : USD 0.0828

48882 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMF63UNEX
Nexperia

1 : USD 0.3014
10 : USD 0.2148
100 : USD 0.1009
1000 : USD 0.0831
3000 : USD 0.0772

2478 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

PMF63UNEX
Nexperia

5 : USD 0.2028
25 : USD 0.1729
100 : USD 0.156
125 : USD 0.1313
343 : USD 0.1248

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 2.2 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 2 A T = 25 C - 57 65 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMF63UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S souce 3 D drain G 1 2 S SC-70 (SOT323) 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMF63UNE SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMF63UNE Z%V 1 % = placeholder for manufacturing site code PMF63UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 20 April 2016 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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