Product Information

UF3C065040K3S

UF3C065040K3S electronic component of UnitedSiC

Datasheet
MOSFET 650V/40mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 48.048 ea
Line Total: USD 48.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

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UF3C065040K3S
UnitedSiC

1 : USD 15.4803
10 : USD 13.6598
30 : USD 13.0902

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

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UF3C065040K3S
UnitedSiC

1 : USD 47.424
3 : USD 47.294
5 : USD 45.591

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Channel Mode
Qualification
Configuration
Series
Brand
Product Type
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Subcategory
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Additional Infomation About Product

UF3C065040K3S is a high-efficiency, low-RDS(on) FET from UnitedSiC, designed for use in high-current, high-power applications. This FET reduces conduction losses and heat dissipation by using advanced silicon carbide (SiC) technology. It has a continuous drain current of 40A, a maximum drain-source voltage of 650V, and an RDS(on) of 175mOhms. Additionally, this FET is equipped with 7th generation U-MOS technology, making it highly reliable and suitable for a variety of high-power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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