V 900 V DS I 25C 35 A D C3M0065090J R 65 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3M SiC MOSFET technology TAB Drain New low impedance package with driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Drain (TAB) 1 2 3 4 5 6 7 Reduce switching losses and minimize gate ringing G DS S S S S S Higher system efficiency Increase power density Increase system switching frequency Gate (Pin 1) Applications Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Marking Part Number Package C3M0065090J 7L D2PAK C3M0065090J Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 GSmax V Gate - Source Voltage (static) -4/+15 V Static Note. 2 GSop 35 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 22 V = 15 V, T = 100C GS C I Pulsed Drain Current 90 A Fig. 22 D(pulse) Pulse width t limited by T jmax P Avalanche energy, Single pulse 110 mJ I = 22A, V = 50V E D DD AS P Power Dissipation 113 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0065090J Rev. B, 10-2016Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 5 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 65 78 VGS = 15 V, ID = 20 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 90 VGS = 15 V, ID = 20A, TJ = 150C 13.6 V = 15 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 11.6 V = 15 V, I = 20 A, T = 150C DS DS J Ciss Input Capacitance 660 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 60 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 4.0 rss AC V = 25 mV E C Stored Energy 16 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy (Body Diode FWD) 39 ON V = 400 V, V = -4 V/15 V, I = 20A, DS GS D J 30 R = 2.5, L= 77 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 17 Note. 3 OFF td(on) Turn-On Delay Time 9 V = 400 V, V = -4 V/15 V DD GS tr Rise Time 10 I = 20 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS t Turn-Off Delay Time 16 d(off) Inductive load t Fall Time 6 f , R Internal Gate Resistance 4.7 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 7.5 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 12 I = 20 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 30.4 (T = 25C unless other wise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 10 A, T = 150 C GS SD J I Continuous Diode Forward Current 22 A V = -4 V Note 1 S GS I Diode pulse Current 90 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recovery time 12 ns rr V = -4 V, I = 20 A, V = 500 V GS SD R Note 1 Q Reverse Recovery Charge 245 nC rr dif/dt = 4100 A/s, T = 150 C J I Peak Reverse Recovery Current 29 A rrm Thermal Characteristics Test Conditions Note Symbol Parameter Max. Unit R Thermal Resistance from Junction to Case 1.1 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090J Rev. B, 10-2016