Product Information

UJ2D1205T

UJ2D1205T electronic component of UnitedSiC

Datasheet
Schottky Diodes & Rectifiers 1200V/5A SiC SCHOTTKY DIODE G2

Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

UJ2D1205T
UnitedSiC

1 : USD 4.9621
10 : USD 4.6832
25 : USD 4.2113
50 : USD 3.9539
100 : USD 3.8324
250 : USD 3.4606
500 : USD 3.341
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

UJ2D1205T
UnitedSiC

1 : USD 4.4102
8 : USD 4.1595
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
UJ2D1230K electronic component of UnitedSiC UJ2D1230K

Schottky Diodes & Rectifiers 1200V/30A SiC SCHOTTKY DIODE G2, TO-247, DUAL
Stock : 0

UJ2D1210T electronic component of UnitedSiC UJ2D1210T

Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G2
Stock : 0

UJ2D1220K electronic component of UnitedSiC UJ2D1220K

Schottky Diodes & Rectifiers 1200V/20A SiC SCHOTTKY DIODE G2, TO-247, DUAL
Stock : 7

UJ2D1215T electronic component of UnitedSiC UJ2D1215T

Schottky Diodes & Rectifiers 1200V/15A SiC SCHOTTKY DIODE G2, TO-247, DUAL
Stock : 0

UJ3C065080K3S electronic component of UnitedSiC UJ3C065080K3S

MOSFET 650V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
Stock : 0

UJ3C065030T3S electronic component of UnitedSiC UJ3C065030T3S

MOSFET 650V/30mOhm, SiC, CASCODE, G3, TO-220-3L, REDUCED Rth
Stock : 9

UJ3C065080T3S electronic component of UnitedSiC UJ3C065080T3S

MOSFET 650V/80mOhm, SiC, CASCODE, G3, TO-220-3L, REDUCED Rth
Stock : 19

UJ3C065030K3S electronic component of UnitedSiC UJ3C065030K3S

MOSFET 650V/30mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
Stock : 22

UJ3C065030B3 electronic component of UnitedSiC UJ3C065030B3

MOSFET 650V/30mOhm, SiC, CASCODE, G3, D2PAK-3L
Stock : 15

UJ3C065080B3 electronic component of UnitedSiC UJ3C065080B3

MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
Stock : 1

Image Description
LSIC2SD120E10CC electronic component of Littelfuse LSIC2SD120E10CC

Schottky Diodes & Rectifiers 1200V 10A TO-247-3L SiC Schottky Diode
Stock : 238

LSIC2SD120A15 electronic component of Littelfuse LSIC2SD120A15

Schottky Diodes & Rectifiers 1200V 15A TO-220-2L SiC Schottky Diode
Stock : 0

LSIC2SD120E15CC electronic component of Littelfuse LSIC2SD120E15CC

Schottky Diodes & Rectifiers 1200V 15A TO-247-3L SiC Schottky Diode
Stock : 28

LSIC2SD120D15 electronic component of Littelfuse LSIC2SD120D15

Schottky Diodes & Rectifiers 1200V 15A TO-263-2L SiC Schottky Diode
Stock : 282

LSIC2SD120C08 electronic component of Littelfuse LSIC2SD120C08

Schottky Diodes & Rectifiers 1200V 8A TO-252-2L SiC Schottky Diode
Stock : 0

LSIC2SD120A20 electronic component of Littelfuse LSIC2SD120A20

Schottky Diodes & Rectifiers 1200V 20A TO-220-2L SiC Schottky Diode
Stock : 0

LSIC2SD120A08 electronic component of Littelfuse LSIC2SD120A08

Schottky Diodes & Rectifiers 1200V 8A TO-220-2L SiC Schottky Diode
Stock : 0

DST8100S electronic component of Littelfuse DST8100S

Schottky Diodes & Rectifiers 8A 100V TO-277B
Stock : 0

DST580S electronic component of Littelfuse DST580S

Schottky Diodes & Rectifiers 5A 80V TO-277B
Stock : 14980

DST1050S electronic component of Littelfuse DST1050S

Schottky Diodes & Rectifiers 10A 50V TO-277B
Stock : 0

xR SiC Series 5A - 1200V SiC Schottky Diode UJ2D1205T . Datasheet . Description CASE United Silicon Carbide, Inc. offers the xR series of high performance SiC CASE Schottky diodes. With zero reverse recovery charge and 175C maximum junction temperature, USCis diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 1 2 Part Number Package Marking UJ2D1205T TO-220-2L UJ2D1205T Features Typical Applications Positive temperature coefficient for safe operation and ease of w w Power converters paralleling w Industrial motor drives w w 175C maximum operating junction temperature Switching-mode power supplies w w Extremely fast switching not dependent on temperature Power factor correction modules Essentially no reverse or forward recovery w w RoHS compliant Maximum Ratings Parameter Symbol Test Conditions Value Units DC blocking voltage V 1200 V R Repetitive peak reverse voltage, T =25C j V 1200 V RRM Surge peak reverse voltage V 1200 V RSM Maximum DC forward current I T = 151C 5 A F C T = 25C, t = 10ms 37.5 C p Non-repetitive forward surge current I A FSM sine halfwave T = 110C, t =10ms 30 C p T = 25C, t = 10ms 21.3 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 13 C p T = 25C, L = 10mH, j Non-repetitive avalanche energy E 44 mJ AS Ipk=2.9A, V =100V DD T = 25C 93 C Power dissipation P W Tot T = 151C 15 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. B, October 2016 1 For more information go to www.unitedsic.com. xR SiC Series 5A - 1200V SiC Schottky Diode UJ2D1205T . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value Parameter Symbol Test Conditions Units Min Typ Max I = 5A, T = 25C - 1.5 1.7 F J V Forward voltage V F I = 5A, T =175C - 2.5 3 F J V =1200V, T =25C - 30 190 R j I Reverse current mA R V =1200V, T =175C - 60 600 R J (1) V =800V Q 26 nC Total capacitive charge R C V =1V, f=1MHz 260 R Total capacitance C V =400V, f=1MHz pF 24 R V =800V, f=1MHz 19 R Capacitance stored energy E V =800V 6.8 mJ C R (1) See Figure 8, Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance R 1.19 1.6 C/W qJC Typical Performance -4 1.E-04 10 10 9 -5 1.E-05 8 10 7 -6 1.E10-06 6 5 -7 - 55C 10 1.E-07 4 25C - 55C 3 100C -8 25C 10 1.E-08 2 150C 175C 1 175C -9 10 1.E-09 0 500 600 700 800 900 1000 1100 1200 0 1 2 3 4 5 Reverse Voltage, V (V) Forward Voltage, V (V) R F Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics Rev. B, October 2016 2 For more information go to www.unitedsic.com. Reverse Current, I (A) R Forward Current, I (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted