Product Information

UJ3C065030K3S

UJ3C065030K3S electronic component of UnitedSiC

Datasheet
MOSFET 650V/30mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 42.0756 ea
Line Total: USD 42.08

21 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
21 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

UJ3C065030K3S
UnitedSiC

1 : USD 40.638
2 : USD 38.415
10 : USD 38.285
30 : USD 36.933

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

UJ3C065030K3S is a UnitedSiC ultra-low profile 3x2mm SMD Schottky diode array suitable for voltage ratings up to 650V. It is designed for consumer applications such as server, telecom, and industrial motor control systems which require high surge current handling capabilities. The product offers a low forward voltage drop, fast switching speed, and temperature-independent behavior. It is RoHS Compliant and features a low profile package, allowing efficient thermal management and design flexibility.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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