Product Information

UJ3C120150K3S

Name: UJ3C120150K3S
Brand: UnitedSiC
SKU: UJ3C120150K3S_UnitedSiC
Availability: OutOfStock
Rating: 5 (11 reviews)

UJ3C120150K3S electronic component of UnitedSiC

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Datasheet

MOSFET 1200V/150mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth

Manufacturer: UnitedSiC

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 11.7423 ea
Line Total: USD 11.74

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

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Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 03 Jun to Wed. 05 Jun MOQ : 1 Multiples : 1 UJ3C120150K3S UnitedSiC	1 : USD 11.7423 10 : USD 10.1828

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Additional Infomation About Product

1200V-150mW SiC FET Rev. C, December 2019 DATASHEET Description This SiC FET device is based on a unique cascode circuit UJ3C120150K3S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, CASE CASE making it ideal for switching inductive loads, and any application D (2) requiring standard gate drive. Features w Typical on-resistance R of 150mW DS(on),typ w Maximum operating temperature of 175C G (1) w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 1 2 3 S (3) Typical applications Part Number Package Marking w EV charging w PV inverters UJ3C120150K3S TO-247-3L UJ3C120150K3S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3C120150K3S Rev. C, December 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 18.4 A C 1 I Continuous drain current D T = 100C 13.8 A C 2 T = 25C Pulsed drain current I 38 A C DM 3 L=15mH, I =2A E 30 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 166.7 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.7 0.9 C/W qJC Datasheet: UJ3C120150K3S Rev. C, December 2019 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unitedsic may also be referenced as

UnitedSiC

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Manufacturer UnitedSiC UnitedSiC
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 18.4 A 18.4 A
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Rds On - Drain-Source Resistance 180 mOhms 180 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3.5 V 3.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 166.7 W 166.7 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Sic Sic
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 30 nC 30 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Uj3 C Uj3 C
Transistor Type 1 N - Channel 1 N - Channel
Brand Unitedsic Unitedsic
Fall Time 7 ns 7 ns
Product Type Mosfet Mosfet
Rise Time 10 ns 10 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 36 ns 36 ns
Typical Turn-On Delay Time 21 ns 21 ns