Product Information

UJ3C120040K3S

Name: UJ3C120040K3S
Brand: UnitedSiC
SKU: UJ3C120040K3S_UnitedSiC
Availability: OutOfStock
Rating: 5 (11 reviews)

UJ3C120040K3S electronic component of UnitedSiC

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Datasheet

MOSFET 1200V/40mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth

Manufacturer: UnitedSiC

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 40.7612 ea
Line Total: USD 40.76

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 UJ3C120040K3S UnitedSiC	1 : USD 30.1636 10 : USD 27.8236 30 : USD 26.5734

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 UJ3C120040K3S UnitedSiC	1 : USD 38.5347 30 : USD 38.4944

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Additional Infomation About Product

The UJ3C120040K3S is a 120-V Silicon Carbide (SiC) Hyperfast Diode from UnitedSiC. It has a rated current of 40 A, operates at a maximum temperature of 150°C, has a reverse recovery time of 9 ns, and a forward voltage drop of 1200 V. This diode is optimized for use in high-efficiency industrial, automotive, and aerospace power designs. The device has an ultra-low forward voltage drop to minimize power loss and an extremely fast switching speed, allowing for the operation of higher efficiency and higher power density designs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unitedsic may also be referenced as

UnitedSiC

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Manufacturer UnitedSiC UnitedSiC
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 65 A 65 A
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Rds On - Drain-Source Resistance 45 mOhms 45 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 429 W 429 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Sic Sic
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 51 nC 51 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Uj3 C Uj3 C
Brand Unitedsic Unitedsic
Cnhts 8541290000 8541290000
Fall Time 20 ns 20 ns
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 20 ns 20 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 63 ns 63 ns
Typical Turn-On Delay Time 33 ns 33 ns