GEN2 SiC Schottky Diode LSIC2SD120A15, 1200 V, 15 A, TO-220-2L RoHS Pb LSIC2SD120A15 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and SiC Schottky Diode a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Excellent surge capability Circuit Diagram TO-220-2L Applications Case Case Boost diodes in PFC or Solar inverters DC/DC stages Industrial motor driv es S witch-mode power EV c harging stations supplies Uninterruptible power supplies 12 Environmental RoHS Littelfuse RoHS logo = 1 2 RoHS conform Littelfuse HF logo = Halogen Free Pb Littelfuse PB-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 1200 V V - RRM DC Blocking Voltage 1200 V V T = 25 C R J 44 T = 25 C C Continuous Forward Current I T = 135 C 21 A F C 15 T = 150 C C Non-Repetitive Forward Surge Current 120 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P T = 25 C 214 C Power Dissipation W P Tot 93 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17GEN2 SiC Schottky Diode LSIC2SD120A15, 1200 V, 15 A, TO-220-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 15 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 2.2 I = 15 A, T = 175 C F J - <1 100 V = 1200 V , T = 25 C R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 920 R Total Capacitance C V = 400 V, f = 1 MHz - 88 pF R - 64 V = 800 V, f = 1 MHz R V R C(V)dV 92 Qc = Total Capacitive Charge - nC Q V = 800 V, C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 0.7 - C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 1E-4 30 T = - 55C J 25 T = 25C J 1E-5 T = 125C J T = 150C J T = 175C 20 J 1E-6 15 T = 175 C J 10 1E-7 T = 150 C 5 J T = 125 C J T = 25 C J 0 1E-8 -0.5 0.51.5 2.53.5 4.5 0200 400600 80010001200 Forward Voltage (V) Reverse Voltage, V (V) R 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 Forward Current (A) Reverse Current, I (A) R