Product Information

UF3C065080T3S

UF3C065080T3S electronic component of UnitedSiC

Datasheet
MOSFET 650V80mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.7812 ea
Line Total: USD 8.78

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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UF3C065080T3S
UnitedSiC

1 : USD 8.7812
10 : USD 7.6221
50 : USD 7.2597

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

650V-80mW SiC Cascode Rev. A, June 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C065080T3S performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive. CASE D (2) Features CASE w Typical on-resistance R of 80mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery w Low gate charge G (1) w Low intrinsic capacitance w ESD protected, HBM class 2 1 2 w Very low switching losses (required RC-snubber loss negligible 3 . under typical operating conditions) S (3) Typical applications w EV charging Part Number Package Marking w PV inverters UF3C065080T3S TO-220-3L UF3C065080T3S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065080T3S Rev. A, June 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 31 A C 1 I Continuous drain current D T = 100C 23 A C 2 T = 25C Pulsed drain current I 65 A C DM 3 L=15mH, I =2.1A E 33 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 190 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.61 0.79 C/W qJC Datasheet: UF3C065080T3S Rev. A, June 2019 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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