Product Information

UF3C120080K4S

UF3C120080K4S electronic component of UnitedSiC

Datasheet
MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 17.0318 ea
Line Total: USD 17.03

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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UF3C120080K4S
UnitedSiC

1 : USD 17.0318
10 : USD 15.6534
30 : USD 15.0017

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

1200V-80mW SiC Cascode Rev. A, January 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C120080K4S performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. CASE CASE Features D (1) w Typical on-resistance R of 80mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery G (4) w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 KS (3) w TO-247-4L package for faster switching, clean gate waveforms S (2) 1 2 3 4 Typical applications w EV charging Part Number Package Marking w PV inverters UF3C120080K4S TO-247-4L UF3C120080K4S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080K4S Rev. A, January 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 33 A C 1 I Continuous drain current D T = 100C 24 A C 2 T = 25C Pulsed drain current I 77 A C DM 3 L=15mH, I =2.8A E 58.5 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 254.2 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.45 0.59 C/W qJC Datasheet: UF3C120080K4S Rev. A, January 2019 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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