Product Information

GT30J122A(STA1,E,D

GT30J122A(STA1,E,D electronic component of Toshiba

Datasheet
IGBTs TO-3PN RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2795 ea
Line Total: USD 2.28

4 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
290 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 2.3124
10 : USD 2.0244
30 : USD 1.686
100 : USD 1.5027
500 : USD 1.4182
1000 : USD 1.3839

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Additional Infomation About Product

The GT30J122A(STA1,E,D with IGBTs TO-3PN RoHS is a power model transistor manufactured by Toshiba. It is designed for use in power applications that require switching and high frequency amplifying. The GT30J122A(STA1,E,D is a three pin, TO-3PN RoHS package and it includes two discrete insulated gate bipolar transistors (IGBTs) for enhanced efficiency and performance. The insulation gate doors allow for a higher level of performance than traditional bipolar transistors. This device has a maximum collector-base voltage of 600 V and a maximum continuous forward current of 30A. It also has a maximum collector current of 45A and a maximum switching frequency of 15 kHz. It is compliant with the RoHS directive and is ideal for applications that need high speed and high efficiency.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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