Product Information

GT50J325

GT50J325 electronic component of Toshiba

Datasheet
IGBT, 600V, TO-3P(LH)

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.6186 ea
Line Total: USD 11.62

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

GT50J325
Toshiba

1 : USD 12.7242
5 : USD 10.1856
10 : USD 9.2097
50 : USD 8.0207
100 : USD 6.6288
250 : USD 6.5008

     
Manufacturer
Product Category
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Ic Continuous A Max
Fall Time Typ
Junction Temperature Tj Max
Junction To Case Thermal Resistance A
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Pulsed Current Icm
Rise Time
Termination Type
Transistor Polarity
Transistor Type
Voltage Vces
LoadingGif

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GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mm Fast Switching Applications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t = 0.05 s (typ.) f Low switching loss : E = 1.30 mJ (typ.) on : E = 1.34 mJ (typ.) off Low saturation Voltage: V = 2.0 V (typ.) CE (sat) FRD included between emitter and collector Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 20 V GES JEDEC DC I 50 C Collector current A JEITA 1 ms I 100 CP TOSHIBA 2-21F2C DC I 50 F Emitter-collector forward A current Weight: 9.75 g 1 ms I 100 FM Collector power dissipation P 240 W C (Tc 25C) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.521 C/W th (j-c) Thermal resistance (diode) R 2.30 C/W th (j-c) Equivalent Circuit Collector Gate Emitter 1 GT50J325 Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V 20 V, V 0 500 nA GES GE CE Collector cut-off current I V 600 V, V 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I 5 mA, V 5 V 3.5 6.5 V GE (OFF) C CE Collector-emitter saturation voltage V I 50 A, V 15 V 2.0 2.45 V CE (sat) C GE Input capacitance C V 10 V, V 0, f 1 MHz 7900 pF ies CE GE Turn-on delay time t 0.09 d (on) Rise time t 0.07 r Turn-on time t 0.24 on Inductive load Switching time s Turn-off delay time t V 300 V, I 50 A 0.30 d (off) CC C V 15 V, R 13 GG G Fall time t 0.05 f (Note 1) Turn-off time t 0.43 off (Note 2) Turn-on switching E 1.30 on loss Switching loss mJ Turn-off switching E 1.34 off loss Peak forward voltage V I 50 A, V 0 4.2 V F F GE Reverse recovery time t I 50 A, di/dt 100 A/ s 65 ns rr F Note 1: Switching time measurement circuit and input/output waveforms V GE 90% 10% 0 V GE I L C I V C CC 90% 90% R G V CE V 10% 10% 10% 10% CE 0 t t d (off) d (on) t f t r t t off on Note 2: Switching loss measurement waveforms V GE 90% 10% 0 I C V 5% CE 0 E E off on 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4

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