This is a 500 Watt, 80 amp 1200 Volt Trench Field Stop insulated gate bipolar transistor (IGBT) manufactured by Infineon and identified by the part number IKW40N120CS6. It is a three-pin, surface mount TO-247-3 package compliant with the Restriction of Hazardous Substances (RoHS) directive. Its Trench Field Stop structure provides excellent conductivity and switching performance while ensuring maximum electrostatic discharge (ESD) protection. This IGBT is designed to provide high power switching capabilities for a wide range of applications, including battery charging, lighting, motor control, welding and solar inverters.