Product Information

STW65N60DM6

Name: STW65N60DM6
Brand: STMicroelectronics
SKU: STW65N60DM6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STW65N60DM6 electronic component of STMicroelectronics

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Datasheet

MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 12.6465 ea
Line Total: USD 12.65

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Thu. 09 May to Mon. 13 May MOQ : 1 Multiples : 1 STW65N60DM6 STMicroelectronics	1 : USD 10.5719 10 : USD 9.1756

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 STW65N60DM6 STMicroelectronics	1 : USD 12.6465 2 : USD 8.2773 6 : USD 7.8295

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Additional Infomation About Product

The STW65N60DM6 is a 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET from STMicroelectronics, housed in a TO-247 package. It is an N-channel MOSFET, providing a large drain-source breakdown voltage and lower gate threshold voltage. It has a high power density, low gate charge, and low conduction losses. This makes the MOSFET suitable for applications such as switch mode power supplies (SMPS) and power conversion. It is also an excellent choice for fast switching and high-efficiency power converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 38 A 38 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 71 mOhms 71 mOhms
Transistor Polarity N - Channel N - Channel
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Qg - Gate Charge 61 nC 61 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Dm6 Dm6
Brand Stmicroelectronics Stmicroelectronics
Product Type Mosfet Mosfet
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets